دیتاشیت IXFX20N120

IXF(K,X)20N120

مشخصات دیتاشیت

نام دیتاشیت IXF(K,X)20N120
حجم فایل 582.612 کیلوبایت
نوع فایل pdf
تعداد صفحات 4

دانلود دیتاشیت IXF(K,X)20N120

IXF(K,X)20N120 Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
  • detail: N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247™-3